PERFORMANCE EVALUATION OF SiC MOSFET AND Si IGBT BASED MULTISTAGE SUPERLIFT DC TO DC CONVRTER

Abstract

Multistage super lift Luo converter is a new topology in a step up DC / DC converter with high voltage transfer gain, reduced ripple and low parasitic effects. This paper focuses on characterizing the Silicon carbide (SiC) MOSFET (CMF20120D, 1200V / 33 A) to realize the positive output multistage Superlift converter. The steady state and transient characteristics of SiC MOSFET are studied using LTspice. The proposed converter employing SiC MOSFET is simulated and its performance is compared with the conventional Si IGBT (IRG7PH30K10PBF) of same rating. The performance parameters related to the proposed DC / DC converter under non ideal condition is derived. A prototype of the SiC MOSFET and Si IGBT based super lift Luo converter is developed to validate the results