IGBT SPICE MODEL WITH SIMPLE PARAMETER EXTRACTION PROCEDURE
Yassine HADINI Abdelghafour GALADI Adil ECHCHELH
power electronics devices
In this paper, an accurate IGBT model is presented. This model is based on the IGBT physic structure. It uses an equivalent circuit which combines an MOSFET, controlled by a voltage controlled voltage source, in series with a diode. All its parameters can be extracted easily from the datasheet information given by the manufacturers. The proposed model presents a good agreement with the measurements. It gives an average error less than 9% for the output characteristics and less than 7% for the transfer characteristic. Moreover, the model is simple and can be implemented in any SPICE-based circuit simulator. A description of the model and the parameter extraction procedure will be provided along.
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